Optical interconnects have been widely studied as a solution
to the electrical interconnect bottleneck foreseen in computing systems. The mature technology of silicon CMOS
electronics is well-established for high-speed information processing, while
optical systems excel at information transmission. Future computing
systems are likely to
incorporate electronic components communicating along an optical
channel that requires optoelectronic devices to convert signals from the electronic into the optical domain and
vice versa.
Electroabsorption modulators
designed for this application must be compatible with both
the electrical and optical
systems. This
dissertation will begin
with a discussion of the requirements for an optoelectronic modulator design.
In particular, I will describe the advantages
and challenges of 2D arrays of surface-normal modulators
that operate over a wide wavelength range with a low voltage drive.
Two surface-normal
modulator architectures
will be presented. First,
I will outline the design,
fabrication and integration of an
asymmetric Fabry-Perot
AlGaAs/GaAs modulator. Following a post-integration
cavity tuning step,
this device achieved a contrast ratio of
3 dB
over a wavelength range from 847 nm to 852 nm using a voltage
drive of only 1 V. The second device, a novel design called the quasi-waveguide
angled-facet electroabsorption modulator (QWAFEM), was simulated and fabricated in the InGaAsP/InP material
system. An experimental contrast ratio of 3 dB over a 16
nm wavelength range near 1510
nm was measured for a voltage drive of only 0.8
V. To the best of our knowledge, no other reported low-voltage surface-normal modulator offers 3 dB of contrast
ratio over such a wide wavelength
range around 1.5 ยตm. Improvements to
the QWAFEM design were simulated and a brief discussion of the
advantages and practical challenges of such devices precedes the conclusion.
INTRODUCTION
As computer technology improves, the information
processing power increases with each generation.
Advances in design
and fabrication of individual computer chips enable devices to operate faster, to consume less electrical power, and to perform
more complex functions. Primarily, this is achieved
by shrinking
the size
scale of
the transistors and using a lower voltage swing to
denote the digital bits. Though this plan of shrinking the transistor size is projected to continue to improve the performance of the
chips, the Semiconductor Industry
Association has predicted that the performance of the
overall system in the upcoming years will be limited by the metallic
wires that connect the chips to each other . Even though
the processors and memory may get faster and
more efficient, the ability of these chips
to communicate with each other will
become impaired by the imperfections of the electrical interconnections. Predictions
of when electrical interconnects will become the performance-limiting factor of computers vary somewhat, but most predict
the necessity of addressing the problem between
2009 and
2014 [1-3].
Several researchers have investigated these fundamental limits of electrical
interconnects and have proposed various solutions . Perhaps, advanced electronic architectures
will be sufficient to address these problems for the upcoming future
In
parallel to
these all-electrical approaches,
many research efforts
have been focused on replacing
the wires with optical links.
For fundamental physical reasons, optical interconnects offer many
advantages over electrical interconnects for high speed links .
However, practical concerns,
such as manufacturability, design complexity,
reliability, and cost, must also be taken into account in
considering whether optical interconnects will penetrate the marketplace
The vision of optical interconnects
consists of many powerful electronic information processing modules communicating with
each other and with the internet’s
optical network via optical channel
links. This
design would utilize the strengths of both technologies: electronics for information
processing and optics for communications.
Currently, optical networks for long-distance
telecommunications (“long-haul”) are widespread and carry most of the voice and data traffic. Demand for internet
bandwidth
has increased at a steady rate in
the last
several
years, despite fluctuations
in the economic markets [17].
The network providers
have responded by installing optical systems to replace wide-area
and metro-area networks. This
demand trend is likely to continue,
driving optical networks to shorter
and shorter distances.
Electrical signals that are targeted for an off-chip destination in an optical- interconnect system must be converted into the optical domain for transmission and then
back into an electrical signal at the receiver chip.
Many devices have been proposed for these electrical-to-optical (EO) and optical-to-electrical (OE) converters. The focus of this
dissertation is the design of semiconductor optoelectronic modulators optimized as EO transmitter devices for
optical interconnects.
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